| 摘要 |
<p>The present invention relates to a semiconductor structure (1) for emitting light, comprising a substrate (100) made of a first semiconductor material (10) having a first type of conductivity, a first electrical contact, a second semiconductor material (20) having a second type of conductivity so as to form a junction (50), a second electrical contact (40) contacting the second semiconductor material (20), and a polarization means suitable for polarizing at least a portion (1a, 1b) of the semiconductor structure. The semiconductor structure (1) comprises a plurality of micro- or nanostructures (200), each having a first end (210) connected to the substrate (100), each micro- or nanostructure (200) comprising at least one portion made from the second semiconductor material (10), or each micro- or nanostructure (200) having the first type of conductivity, the second end (220) contacting the second semiconductor material (20) so as to form the junction (50).</p> |
