| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of polishing a semiconductor substrate capable of obtaining a steady, high polishing rate while maintaining polishing characteristics, by making a surface state of a CMP polishing pad appropriate using an existing CMP polishing pad and an existing polishing agent in a low-pressure polishing process. <P>SOLUTION: There is provided a method of polishing a semiconductor substrate in which a voltage is applied to a CMP polishing pad having a center line average roughness (Ra) of 7-11 μm by pressing a semiconductor substrate against the CMP polishing pad at a pressure of 3-7 kPa, and chemical mechanical polishing is performed on a thin film formed on the semiconductor substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
