发明名称 |
DMOS TRANSISTOR HAVING AN INCREASED BREAKDOWN VOLTAGE AND METHOD FOR PRODUCTION |
摘要 |
A depletion type DMOS transistor comprises a gap in electrode material allowing incorporation of a well dopant species into the underlying semiconductor material. During subsequent dopant diffusion a continuous well region is obtained having an extended lateral extension without having an increased depth. The source dopant species is implanted after masking the gap. Additional channel implantation is performed prior to forming the gate dielectric material. |
申请公布号 |
US2012306010(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201013579155 |
申请日期 |
2010.02.15 |
申请人 |
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发明人 |
LERNER RALF;HOWER PHIL;KITTLER GABRIEL;SCHOTTMANN KLAUS |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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