| 摘要 |
According to one embodiment, a method for manufacturing a semiconductor device, includes forming a mask film on a base material. The base material includes a first portion made of a first material and a second portion made of a second material. The mask film includes a third portion located immediately above the first portion and made of a third material and a fourth portion located immediately above the second portion and made of a fourth material. The mask film has an opening formed in both the third portion and the fourth portion. The method includes selectively removing the first portion and the second portion respectively by etching using the mask film as a mask under a condition such that etching rate of the fourth material is higher than that of the third material and etching rate of the first material is higher than that of the second material. |
