发明名称 HIGH VOLTAGE ARRANGEMENT COMPRISING AN INSULATING STRUCTURE
摘要 <p>It is presented a high voltage arrangement (1) for a high voltage power system. The high voltage arrangement (1) has an insulating structure which reduces the creep path in the insulating structure. The high voltage arrangement (1) comprises an insulating structure (6) arranged around the second conductor (13) for providing insulation of the second conductor (13), wherein the insulating structure (6) has a continuous extension in an axial direction from a first end (21-1) thereof providing insulation of essentially the entire length of the second conductor (13) to a second end (21-2) of the insulating structure arranged around the bushing portion (11-1), which second end (21-2) extends around the bushing portion (11-1) at least to a point where an electric potential of an external surface of the bushing portion (11-1) is at most equal to the average of the potential of the first conductor (9) and the potential of the interfacing plane (4) when the high voltage arrangement (1) is in use.</p>
申请公布号 WO2012163654(A1) 申请公布日期 2012.12.06
申请号 WO2012EP58813 申请日期 2012.05.11
申请人 ABB TECHNOLOGY LTD;BERGLUND, MATS;ERIKSSON, ANDERS BO;WEDIN, ERIK;LINDGREN, JAN;RAMKVIST, MATS;BERTILSSON, STINA;BRUNSTROEM, TINA 发明人 BERGLUND, MATS;ERIKSSON, ANDERS BO;WEDIN, ERIK;LINDGREN, JAN;RAMKVIST, MATS;BERTILSSON, STINA;BRUNSTROEM, TINA
分类号 H01F27/04;H01F27/32 主分类号 H01F27/04
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