| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve negative photo-conductance in an element including silicon. <P>SOLUTION: A light-receiving element includes: a silicon substrate 101; an insulation layer 102 formed on the silicon substrate 101; a source 103 and a drain 104 including silicon formed on the insulation layer 102; a narrow-line part 105 including silicon disposed between and in connection with the source 103 and the drain 104; a gate electrode 106 provided for the narrow-line part 105 via a gate insulation layer 111; and a gate voltage application part 108 applying voltage to the gate electrode 106. The gate voltage application part 108 applies to the gate electrode 106, voltage that decreases the conductance between the source 103 and the drain 104 by irradiating a light-receiving region 107 including a region provided with the narrow-line part 105 with light. <P>COPYRIGHT: (C)2013,JPO&INPIT |
