| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress air bubbles from remaining in an organic film. <P>SOLUTION: A manufacturing method of a semiconductor device includes steps of forming an interlayer dielectric film 37 having an opening (contact holde 36), forming a conductor film 39 on the interlayer dielectric film 37 and in the opening, and applying and forming a first photosensitive organic film 1 on the conductor film 39. This manufacturing method also includes steps of exposing parts outside the opening in the first photosensitive organic film 1, removing the parts outside the opening in the first photosensitive organic film 1 by development, and forming a first organic film 11 by curing parts in the opening in the first photosensitive organic film 1 with ultraviolet light. This manufacturing method further includes steps of applying and forming a second photosensitive organic film 2 on the conductor film 39 so as to cover the first organic film 11 and forming a second organic film 12 at least on the first organic film 11 by curing the second photosensitive organic film 2 with ultraviolet light. <P>COPYRIGHT: (C)2013,JPO&INPIT |
