发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dummy gate on the substrate; forming a contact etch stop layer on the dummy gate and the substrate; performing a planarizing process to partially remove the contact etch stop layer; partially removing the dummy gate; and performing a thermal treatment on the contact etch stop layer.
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申请公布号 |
US2012309158(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113154396 |
申请日期 |
2011.06.06 |
申请人 |
HUNG WEN-HAN;CHEN TSAI-FU;LO TA-KANG;CHENG TZYY-MING |
发明人 |
HUNG WEN-HAN;CHEN TSAI-FU;LO TA-KANG;CHENG TZYY-MING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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