发明名称 |
PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND AN INTERMEDIATE PRODUCT FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE |
摘要 |
According to one aspect of the inventive concept there is provided a process for manufacturing a semiconductor device, comprising: providing a channel layer (104), providing a mask (106)on the channel layer, epitaxially growing a contact layer (108) in contact with the channel layer, epitaxially growing a support layer (110) on the contact layer, wherein the support layer is arranged to be etched at a higher rate than the contact layer, forming a trench extending through the support layer by removing the mask, and providing a conductor (118) in the trench. There is also provided an intermediate product for the manufacture of a semiconductor device. |
申请公布号 |
WO2012163429(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
WO2011EP59190 |
申请日期 |
2011.06.03 |
申请人 |
ACCONEER AB;EGARD, MIKAEL;LIND, ERIK;WERNERSSON, LARS-ERIK |
发明人 |
EGARD, MIKAEL;LIND, ERIK;WERNERSSON, LARS-ERIK |
分类号 |
H01L21/336;H01L21/335;H01L21/338;H01L21/8252;H01L29/20;H01L29/423;H01L29/49;H01L29/51 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|