发明名称 |
Method of Forming Sidewall Spacers Having Different Widths Using a Non-Conformal Deposition Process |
摘要 |
Disclosed herein is a method of forming sidewall spacers for a semiconductor device. In one example, the method comprises forming a gate electrode structure above a semiconducting substrate. performing a non-conformal deposition process to deposit a layer of spacer material above the gate electrode structure and performing an anisotropic etching process on the layer of spacer material to define a first sidewall spacer proximate a first side of the gate electrode structure and a second sidewall spacer proximate a second side of the gate electrode structure, wherein the first and second sidewall spacers have different widths. |
申请公布号 |
US2012309182(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113118826 |
申请日期 |
2011.05.31 |
申请人 |
FLACHOWSKY STEFAN;HOENTSCHEL JAN;JAVORKA PETER;GLOBALFOUNDRIES INC. |
发明人 |
FLACHOWSKY STEFAN;HOENTSCHEL JAN;JAVORKA PETER |
分类号 |
H01L21/3205;B82Y40/00 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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