| 摘要 |
A method of producing an SiC single crystal is provided in which an SiC single crystal is grown on a first seed crystal held at a lower end of a seed crystal holder, by immersing the first seed crystal in a source material melt in a crucible; this method of producing an SiC single crystal is characterized by carrying out a treatment that promotes the growth of a polycrystal in a region outside the first seed crystal. |
