SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a wafer (1100); a plurality of convex structures (1200) formed on the wafer (1100), in which every two adjacent convex structures (1200) are separated by a cavity in a predetermined pattern and arranged in an array, and the cavity between every two adjacent convex structures is less than 50nm in width; and a first semiconductor film (1300) formed on the plurality of convex structures (1200), in which a part of the first semiconductor film (1300) is spaced apart from the wafer (1100).