发明名称 DEPOSITION REACTOR WITH PLASMA SOURCE
摘要 <p>The invention relates to a deposition reactor including an in-feed part that defines an expansion space which is configured to lead reactants as a top to bottom flow from a plasma source (110) towards a reaction chamber, the expansion space widening towards the reaction chamber (335), and a lifting mechanism for loading at least one substrate (360) to the reaction chamber from the top side of the reaction chamber. The deposition reactor is configured to deposit material on said at least one substrate in the reaction chamber by sequential self-saturating surface reactions.</p>
申请公布号 WO2012136875(A8) 申请公布日期 2012.12.06
申请号 WO2011FI50302 申请日期 2011.04.07
申请人 PICOSUN OY;KILPI, VAEINOE;LI, WEI-MIN;MALINEN, TIMO;KOSTAMO, JUHANA;LINDFORS, SVEN 发明人 KILPI, VAEINOE;LI, WEI-MIN;MALINEN, TIMO;KOSTAMO, JUHANA;LINDFORS, SVEN
分类号 C23C16/455 主分类号 C23C16/455
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