HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high breakdown voltage semiconductor device which equalizes voltages divided by capacitive elements even though the thicknesses of interlayer dielectric films between conductive thin films are increased in a field plate where the serial connection of the capacitive elements is formed.

SOLUTION: A high breakdown voltage semiconductor device of this invention includes: a first conductive type first semiconductor region; a second conductive type second semiconductor region formed adjacent to the first semiconductor region; a first conductive type third semiconductor region formed so as to sandwich the first conductive type first semiconductor region with the second semiconductor region; first conductive films arranged on a first dielectric film formed on the first semiconductor region at predetermined intervals; and second conductive films which are cyclically arranged in positions of a second dielectric film formed on the first conductive films that respectively overlap with separation regions of the first conductive films in a plain view and partially overlap with the first conductive films placed on both sides of each separation region. First protruding parts are respectively provided at regions of the second conductive films which face the separation regions of the first conductive films.

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