| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask blank and a mask blank that prevents a charge-up phenomenon and prevents chipping in an alignment mark. <P>SOLUTION: The mask blank for electron beam drawing is used for forming a resist pattern by electron beam drawing; and the mask blank includes a thin film 2 for forming a transfer pattern and an etching mask film 3 made of an inorganic material having durability against etching in the thin film 2 for forming a transfer pattern, formed in this order on a substrate 1. The thin film 2 for forming a transfer pattern comprises a material having conductivity in such a degree that prevents a charge-up phenomenon during electron beam drawing for patterning, and is formed as extending from the major surface of the substrate to a side face or a chamfered face of the substrate. The etching mask film 3 is not present at least on a side face of the substrate but is formed to expose the thin film 2 for forming a transfer pattern. <P>COPYRIGHT: (C)2013,JPO&INPIT |
