发明名称 |
METHODS FOR REPAIRING LOW-K DIELECTRICS USING CARBON PLASMA IMMERSION |
摘要 |
Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.
|
申请公布号 |
US2012309114(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113150843 |
申请日期 |
2011.06.01 |
申请人 |
YAO DAPING;PORSHNEV PETER I.;APPLIED MATERIALS, INC. |
发明人 |
YAO DAPING;PORSHNEV PETER I. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|