METHOD FOR FORMING GATE INSULATING FILM, AND DEVICE FOR FORMING GATE INSULATING FILM

摘要

A method for forming a gate insulating film, in which a gate insulating film is formed on a semiconductor substrate, comprises: a film formation step of forming a high-dielectric film on the semiconductor substrate using CVD or ALD; a first modification step of applying radial treatment to, and modifying, the formed high-dielectric film at a temperature lower than the film formation temperature; and a second modification step of applying heat treatment to, and causing crystallization in, the high-dielectric film formed in the first modification step.