发明名称 ELECTRODE PATTERN FOR EVALUATION OF SEMICONDUCTOR LAYER
摘要 <P>PROBLEM TO BE SOLVED: To provide an electrode pattern for evaluation which precisely evaluates the effective thickness of a semiconductor layer on a surface layer side in a semiconductor substrate where two semiconductor layers, having the same conductivity type, are formed. <P>SOLUTION: A semiconductor substrate is formed by forming a first conductive type first semiconductor layer 1a at a surface layer part and also forming a second semiconductor layer 1b, which has the first conductive type and the impurity density higher than the first semiconductor layer 1a, below the first semiconductor layer 1a. In the semiconductor substrate, a pair of electrode patterns P2 for evaluating the effective thickness of the first semiconductor layer 1a is designed so that a distance L2 between the pair of electrode patterns P2 becomes larger than twice the design thickness D of the first semiconductor layer 1a. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012238910(A) 申请公布日期 2012.12.06
申请号 JP20120190247 申请日期 2012.08.30
申请人 DENSO CORP 发明人 KONO KENJI
分类号 H01L27/12;H01L21/66 主分类号 H01L27/12
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