| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gate driving circuit that allows reduction in delay time at the time of turn-off of an insulated-gate-type semiconductor switch element and allows suppression of a surge voltage by di/dt of breaking current. <P>SOLUTION: A gate driving circuit includes: an on-circuit that is connected between a gate terminal and a gate auxiliary terminal of a semiconductor switch element and is composed of a series body of a gate power supply for turn-on, a switch for turn-on, and a gate resistor for turn-on; and an off-circuit in which a first gate resistor for turn-off, a switch for turn-off, and a power supply for turn-off are connected in series between the gate terminal and the gate auxiliary terminal of the semiconductor switch element and a series body of a capacitor and a second gate resistor for turn-off is connected in parallel to the first gate resistor for turn-off. The resistance value of the second gate resistor for turn-off is smaller than that of the first gate resistor for turn-off. The time constant of a CR circuit constituted by the capacitor and the second gate resistor for turn-off is the same as the turn-off delay time of an insulated-gate-type semiconductor switch element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
