发明名称 |
SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT |
摘要 |
A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.
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申请公布号 |
US2012308758(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201213475360 |
申请日期 |
2012.05.18 |
申请人 |
HORI TSUTOMU;SASAKI MAKOTO;NISHIGUCHI TARO;FUJIWARA SHINSUKE;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HORI TSUTOMU;SASAKI MAKOTO;NISHIGUCHI TARO;FUJIWARA SHINSUKE |
分类号 |
C30B29/36;C30B23/00;C30B29/66 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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