发明名称 |
METHOD OF FORMING HIGH GROWTH RATE, LOW RESISTIVITY GERMANIUM FILM ON SILICON SUBSTRATE |
摘要 |
A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation layer. The doped semiconductor layer is formed on the foundation layer. Each layer may be formed by vapor deposition processes such as CVD. The foundation layer may be germanium and the doped semiconductor layer may be phosphorus doped germanium. |
申请公布号 |
US2012306054(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201213482585 |
申请日期 |
2012.05.29 |
申请人 |
HUANG YI-CHIAU;SANCHEZ ERROL ANTONIO C.;TAO XIANZHI;APPLIED MATERIALS, INC. |
发明人 |
HUANG YI-CHIAU;SANCHEZ ERROL ANTONIO C.;TAO XIANZHI |
分类号 |
H01L21/20;H01L21/322;H01L29/16 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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