发明名称 WIRING SWITCH DESIGNS BASED ON A FIELD EFFECT DEVICE FOR RECONFIGURABLE INTERCONNECT PATHS
摘要 An integrated circuit, including a substrate, at least one metal wiring layer disposed above the substrate. The metal wiring layer including a wiring switch and a plurality of patterned conductors. The wiring switch including a back gate field effect transistor (BGFET).
申请公布号 US2012306017(A1) 申请公布日期 2012.12.06
申请号 US201213479946 申请日期 2012.05.24
申请人 EDELSTEIN DANIEL C.;GATES STEPHEN M.;MURALIDHAR RAMACHANDRAN;THEIS THOMAS N.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 EDELSTEIN DANIEL C.;GATES STEPHEN M.;MURALIDHAR RAMACHANDRAN;THEIS THOMAS N.
分类号 H01L21/20;H01L29/78 主分类号 H01L21/20
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