发明名称 SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS
摘要 A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a trimming unit for reducing a width of the first pattern to a predetermined width; a boundary layer forming unit for forming a boundary layer, on a surface of the first pattern; a second mask material layer forming unit for forming a second mask material layer on a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; and a boundary layer etching unit for exposing the first pattern and forming a second pattern having the second mask material layer at a top portion thereof by etching the boundary layer.
申请公布号 US2012305183(A1) 申请公布日期 2012.12.06
申请号 US201213590298 申请日期 2012.08.21
申请人 YAEGASHI HIDETAMI;SHIMURA SATORU;HAYAKAWA TAKASHI;TOKYO ELECTRON LIMITED 发明人 YAEGASHI HIDETAMI;SHIMURA SATORU;HAYAKAWA TAKASHI
分类号 H01L21/308;G03F7/40;H01L21/027;H01L21/3065 主分类号 H01L21/308
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