| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of obtaining high light-emitting efficiency in a wide current density range and to provide a wafer. <P>SOLUTION: A semiconductor light-emitting element includes an n-type semiconductor layer containing a nitride semiconductor, a p-type semiconductor layer containing the nitride semiconductor, and a light-emitting part provided between the n-type semiconductor layer and the p-type semiconductor layer. The light-emitting part includes a plurality of well layers containing In<SB POS="POST">x1</SB>Ga<SB POS="POST">1-x1</SB>N (0<x1<1) and barrier layers provided between the adjacent plurality of well layers and containing GaN. Among the plurality of well layers, a p-side well layer that is closest to the p-type semiconductor layer has a thickness thicker than the thickness of all the well layers except for the p-side well layer among the plurality of well layers. The In composition ratio of the p-side well layer is lower than that of all the well layers except for the p-side well layer. The thickness of the barrier layers is twice or less of the p-side well layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
