发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR WAFER LAMINATE MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor wafer laminate manufacturing method, which can sufficiently reduce voids at a bump part, sufficiently minimize warp after grinding and achieve thinning of a semiconductor device having a structure of laminated plurality of semiconductor elements when the semiconductor device is manufactured from a semiconductor wafer with an adhesive layer. <P>SOLUTION: A semiconductor device manufacturing method of the present invention comprises the steps of: forming a photosensitive adhesive layer by coating a liquid photosensitive adhesive on a circuit surface of a first semiconductor wafer having the circuit surface on which metal bumps are formed; obtaining a semiconductor wafer with an adhesive layer by bringing the photosensitive adhesive layer to a B-stage by light irradiation; obtaining a semiconductor wafer laminate by pressure bonding the semiconductor wafer with the adhesive layer with a second semiconductor wafer while sandwiching the adhesive layer of the semiconductor wafer with the adhesive layer; and cutting the semiconductor wafer laminate into a semiconductor element laminates in each of which semiconductor elements are laminated. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012238702(A) |
申请公布日期 |
2012.12.06 |
申请号 |
JP20110106331 |
申请日期 |
2011.05.11 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
OKUBO KEISUKE;NAGAI AKIRA;ENOMOTO TETSUYA;MASUKO TAKASHI;MITSUKURA KAZUYUKI |
分类号 |
H01L25/065;H01L21/60;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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