METHOD FOR PRODUCING AN MOS TRANSISTOR

摘要

The invention relates to a method for producing a semiconductor structure comprising a buried cavity (64), wherein a first semiconductor substrate (10) having an upper face (22) is provided and a depression is formed in the upper face (22) of the first semiconductor substrate (10). In addition, a second semiconductor substrate (26) having crystal lattice planes and an upper face (28) is provided, said upper face extending substantially parallel to the crystal lattice planes, and one of the crystal lattice planes, which is located at a desired distance from the upper face (28) of the second semiconductor substrate (26), is weakened by means of ion implantation such as to generate a predetermined breaking plane. The upper face (28) of the second semiconductor substrate (26) is bonded to the upper face (22) of the first semiconductor substrate (10) under vacuum conditions, wherein the second semiconductor substrate (26) covers the depression (20) in the upper face (22) of the first semiconductor substrate (10) in order to form a buried cavity (60). The second semiconductor substrate (26) is split along the predetermined breaking plane, which leaves a membrane layer (34) of the upper face (22) of the first semiconductor substrate (10).