| 发明名称 |
VIALESS MEMORY STRUCTURE AND METHOD OF MANUFACTURING SAME |
| 摘要 |
A method of manufacturing a magnetic memory cell, including a magnetic tunnel junction (MTJ), includes using silicon nitride layer and silicon oxide layer to form a trench for depositing copper to be employed for connecting the MTJ to other circuitry without the use of a via. |
| 申请公布号 |
US2012306033(A1) |
申请公布日期 |
2012.12.06 |
| 申请号 |
US201113154346 |
申请日期 |
2011.06.06 |
| 申请人 |
SATOH KIMIHIRO;HUAI YIMING;ZHANG JING;AVALANCHE TECHNOLOGY, INC. |
发明人 |
SATOH KIMIHIRO;HUAI YIMING;ZHANG JING |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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