发明名称 |
Trough channel transistor and methods for making the same |
摘要 |
The present invention relates to transistor devices having a trough channel structure through which electrical current flows and methods for making the same. A transistor device having a semiconductor trough structure comprises a semiconductor substrate of a first conductivity type having a top surface; a semiconductor trough protruded from the top surface of the substrate along a first direction and having two top surfaces, two outer lateral surfaces, and an inner surface; a layer of isolation insulator disposed on the substrate and abutting the outer lateral surfaces of the semiconductor trough; a gate dielectric layer lining the inner surface and the top surfaces of the semiconductor trough; and a gate electrode disposed on top of the isolation insulator and extending over and filling the semiconductor trough with the gate dielectric layer interposed therebetween. The gate electrode extends along a second direction not parallel to the first direction provided in the semiconductor trough. Regions of the semiconductor trough not directly beneath the gate electrode have a second conductivity type opposite to the first conductivity type provided in the substrate. |
申请公布号 |
US2012306005(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113136051 |
申请日期 |
2011.07.21 |
申请人 |
SATOH KIMIHIRO;ZHANG JING;HUAI YIMING |
发明人 |
SATOH KIMIHIRO;ZHANG JING;HUAI YIMING |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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