| 摘要 |
<p>[Problem] It was difficult to stably obtain a photoelectric conversion element having high photoconversion efficiency. [Solution] In the present invention, a photoelectric converter has the following: a light-absorbing layer containing a compound semiconductor capable of photoelectric conversion and comprising a group Ib element that includes at least Cu, a group IIIb element, and a group VIb element; and a semiconductor layer disposed on one surface side of the light-absorbing layer and having an orientation different from that of the light-absorbing layer, where the semiconductor layer contains a group Ib element that includes at least Cu, at least one element selected from Cd, Zn, and In, and a group VIb element. The photoelectric conversion element has a region where the Cu ratio decreases, from the light-absorbing layer through the joining interface toward the semiconductor layer.</p> |
