EPITAXIAL WAFER AND METHOD FOR FORMING THE SAME, AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

摘要

Disclosed are an epitaxial wafer and method for forming the same, and a method for forming semiconductor structure. The epitaxial wafer comprises: a Si substrate (1100); a plurality of protrusions (1200) formed on the Si substrate, wherein each two protrusions (1200) are spaced at a preset distance, and the plurality of protrusions (1200) are arranged in an array; a first semiconductor material thin layer (1300) formed on the plurality of protrusions (1200), and the part of the first semiconductor material thin layer (1300) between each two protrusions (1200) is suspended relative to the Si substrate (1100); and nitride compound semiconductor material layer (2000) formed on the first semiconductor material thin layer (1300).