发明名称 FULLERENE-DOPED NANOSTRUCTURES AND METHODS THEREFOR
摘要 <p>Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.</p>
申请公布号 EP2528855(A1) 申请公布日期 2012.12.05
申请号 EP20110735236 申请日期 2011.01.21
申请人 THE BOARD OF REGENTS OF THE LELAND STANFORD JUNIOR UNIVERSITY 发明人 LEMIEUX, MELBURNE, C.;VIRKAR, AJAY;BAO, ZHENAN
分类号 B82B1/00;B82B3/00 主分类号 B82B1/00
代理机构 代理人
主权项
地址