| 摘要 |
The present invention relates to a power semiconductor arrangement comprising a power semiconductor device (14), having an emitter electrode and a collector electrode, wherein the collector electrode is electrically connected to a lower electrode (16) and the emitter electrode is electrically connected to an upper electrode (18), wherein the power semiconductor device (14) is arranged to at least one further power semiconductor device in parallel. In order to allow the power semiconductor arrangement (10) to provide an electrical short-circuit mode after a failure event having an improved reliability as well as durability, the arrangement (10) further comprises a high energy material (34) being connected to the power semiconductor device (14) and being connected to at least one failure current bypass unit (36, 54, 70), the failure current bypass unit (36, 54, 70) being arranged in parallel to the power semiconductor device (14) and being activatable by the high energy material (34) to form a current bypass. |
