| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to easily perform a photo process for forming a wire by including a first pattern spacer which covers the upper side and lateral side of a second gate pattern and a group spacer which covers the upper side and lateral side of a gate group. CONSTITUTION: A substrate(100) includes a first region(CA) and a second region(PA). A gate group(G) includes a plurality of cell gate patterns and selection gate patterns. A group spacer(185) covers the upper side and lateral side of the gate group. The group spacer has a first inflection point. A first pattern spacer(186) covers the upper side and lateral side of the first gate pattern. The first pattern spacer has a second inflection point.</p> |
