Method of manufacturing semiconductor device

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent undesirable etching in a gate insulation layer by forming a first sacrificial layer with a high etch selectivity near the gate insulation layer. CONSTITUTION: A substrate(100) with a protruded channel region(110) is provided. A part of the sidewall of the protrusion is covered with a device isolation layer(120). A gate insulation layer(130) surrounding the protruded channel region is formed. A gate electrode(140) is formed on the gate insulation layer. A capping layer(150) is formed on the upper side of the gate electrode. A spacer(160) is located on both sides of the gate electrode.