| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to easily control a threshold voltage by forming a channel with a uniform width. CONSTITUTION: A gate structure(120) includes a first insulation layer(110) and a control gate layer(115) which are alternatively laminated on a substrate(100). A channel line(CL) is extended along the gate structure in a second direction cross a first direction. A memory film(130) is interposed between the gate structure and the channel line. A bit line contact(BLC) is contacted with the uppermost surface of the channel line and is arranged in the first direction. A source line(SL) is alternatively arranged with a first direction row of the bit line contact. A bit line(BL) is formed on the bit line contact.</p> |
