| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory which operates stably by suppressing a characteristic degradation of a storage element. <P>SOLUTION: The memory has a plurality of memory cells 10 which comprise: a nonvolatile resistance change type storage element 5 in which a storage layer is formed between two electrodes, an electric field having a different polarity is applied to between these two electrodes, thereby shifting atoms or ions, and a resistance value of the storage layer changes reversibly; and a switching field-effect transistor 6 series-connected to this resistance change type storage element 5, wherein information is stored in the memory cells 10. This structure is that an on current of the field-effect transistor 6 in the memory cells 10 is smaller than the on current of the field-effect transistor in a portion excluding the memory cells 10. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
