发明名称 Memory device and and fabricating method thereof
摘要 PURPOSE: A semiconductor device and a manufacturing method thereof are provided to shield EMI(Electro Magnetic Interference) in a package level. CONSTITUTION: A substrate(100) includes a first metal layer(110), a first wire(120), a second wire(130,131), and an insulation layer(102). The first metal layer includes an exposure side(110a) which is exposed to the side of the substrate. A semiconductor chip(180) is formed on one side of the substrate. A molding member(198) molds the semiconductor chip. An external connection terminal(170,171) is formed on the other side of the substrate.
申请公布号 KR20120131530(A) 申请公布日期 2012.12.05
申请号 KR20110049751 申请日期 2011.05.25
申请人 发明人
分类号 H01L23/60;H01L23/12 主分类号 H01L23/60
代理机构 代理人
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