| 摘要 |
PURPOSE: A nonvolatile memory including a plurality of memory cells laminated on a substrate is provided to improve the reliability of program and read operations by controlling a rising slope of a driving signal applied to a word line. CONSTITUTION: A memory cell array(110) includes a plurality of memory cells laminated on a substrate. A plurality of word lines are connected to the memory cell array. A plurality of pass voltage generators(131-13N) generate driving signals applied to unselected word lines among a plurality of word lines using a plurality of current paths. A voltage control circuit(140) controls the number of current paths for generating the driving signals. |
