发明名称 |
SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL WAFER |
摘要 |
The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2 x 10 19 cm -3 to 6 x 10 20 cm -3 . |
申请公布号 |
EP2385158(A4) |
申请公布日期 |
2012.12.05 |
申请号 |
EP20090820658 |
申请日期 |
2009.10.14 |
申请人 |
NIPPON STEEL CORPORATION |
发明人 |
NAKABAYASHI, MASASHI;FUJIMOTO, TATSUO;KATSUNO, MASAKAZU;TSUGE, HIROSHI |
分类号 |
C30B29/36;C30B23/00 |
主分类号 |
C30B29/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|