发明名称 |
Manufacture methods of thin film transistor and array substrate and mask |
摘要 |
<p>Embodiments of the disclosed technology disclose a manufacture method of a thin film transistor (TFT), a manufacture method of an array substrate, and a mask therefor. The manufacture method of the thin film transistor comprises: patterning a wire layer by using a exposure machine and a mask with a first exposure amount larger than a normal exposure amount during formation of source and drain electrodes; forming a semiconductor layer on the patterned wire layer; patterning the semiconductor layer by using the exposure machine and the mask with a second exposure amount smaller than the first exposure amount. The mask comprises a source region for forming the source electrode, a drain region for forming the drain electrode and a slit provided between the source region and the drain region, and the width of the slit is smaller than the resolution of the exposure machine.</p> |
申请公布号 |
EP2530720(A1) |
申请公布日期 |
2012.12.05 |
申请号 |
EP20120170417 |
申请日期 |
2012.06.01 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
ZHOU, WEIFENG;XUE, JIANSHE |
分类号 |
H01L29/66;H01L21/308;H01L21/3213;H01L29/417 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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