发明名称 |
Weak bit compensation for static random access memory |
摘要 |
A static random access memory (SRAM) includes a data line, a data line bar, and a current path block. The current path block includes at least two transistors configured to provide a current path for the data line in transition from a first logic voltage to a second logic voltage, wherein the current path block is connected to the data line and the data line bar. |
申请公布号 |
US8325510(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20100704710 |
申请日期 |
2010.02.12 |
申请人 |
LEE CHENG HUNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE CHENG HUNG |
分类号 |
G11C11/00;G11C7/00;G11C8/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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