发明名称 |
Memristors with an electrode metal reservoir for dopants |
摘要 |
A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided. |
申请公布号 |
US8325507(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20100893825 |
申请日期 |
2010.09.29 |
申请人 |
YANG JIANHUA;YI WEI;STUKE MICHAEL JOSEF;WANG SHIH-YUAN;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
YANG JIANHUA;YI WEI;STUKE MICHAEL JOSEF;WANG SHIH-YUAN |
分类号 |
H01L29/8605;G11C11/21;H01L21/04 |
主分类号 |
H01L29/8605 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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