| 摘要 |
An organic thin film transistor includes a buffer layer on a substrate, a source and drain electrodes on the buffer layer, wherein each of the source and drain electrodes is in an island shape, a tunneling barrier layer on the source and drain electrodes, an organic semiconductor layer on the tunneling barrier layer, a gate insulation layer on the organic semiconductor layer, and a gate electrode overlapping both edges of the source and drain electrodes, and formed on the gate insulation layer. |
