发明名称 Methods of fabricating nitride semiconductor structures with interlayer structures
摘要 A semiconductor structure includes a first layer of a nitride semiconductor material, a substantially unstrained nitride interlayer on the first layer of nitride semiconductor material, and a second layer of a nitride semiconductor material on the nitride interlayer. The nitride interlayer has a first lattice constant and may include aluminum and gallium and may be conductively doped with an n-type dopant. The first layer and the second layer together have a thickness of at least about 0.5 μm. The nitride semiconductor material may have a second lattice constant, such that the first layer may be more tensile strained on one side of the nitride interlayer than the second layer may be on the other side of the nitride interlayer.
申请公布号 US8324005(B2) 申请公布日期 2012.12.04
申请号 US20100907556 申请日期 2010.10.19
申请人 SAXLER ADAM WILLIAM;BURK, JR. ALBERT AUGUSTUS;CREE, INC. 发明人 SAXLER ADAM WILLIAM;BURK, JR. ALBERT AUGUSTUS
分类号 H01L21/00 主分类号 H01L21/00
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