发明名称 Metal capacitor and method of making the same including dielectric layer of different mechanical strength regions
摘要 A metal capacitor structure is disclosed. The metal capacitor structure includes: a dielectric layer having a first region and a second region, a dielectric constant of the dielectric layer in the second region being higher than a dielectric constant of the dielectric layer in the first region; a dual damascene metal interconnection positioned in the first region; and a damascene capacitor electrode positioned in the second region.
申请公布号 US8324712(B2) 申请公布日期 2012.12.04
申请号 US201213342106 申请日期 2012.01.01
申请人 YANG CHIN-SHENG;UNITED MICROELECTRONICS CORP. 发明人 YANG CHIN-SHENG
分类号 H01L29/00;H01L23/48;H01L23/52;H01L29/40 主分类号 H01L29/00
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