发明名称 |
Metal capacitor and method of making the same including dielectric layer of different mechanical strength regions |
摘要 |
A metal capacitor structure is disclosed. The metal capacitor structure includes: a dielectric layer having a first region and a second region, a dielectric constant of the dielectric layer in the second region being higher than a dielectric constant of the dielectric layer in the first region; a dual damascene metal interconnection positioned in the first region; and a damascene capacitor electrode positioned in the second region. |
申请公布号 |
US8324712(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US201213342106 |
申请日期 |
2012.01.01 |
申请人 |
YANG CHIN-SHENG;UNITED MICROELECTRONICS CORP. |
发明人 |
YANG CHIN-SHENG |
分类号 |
H01L29/00;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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