Epitaxial wafer and manufacturing method thereof

摘要

A semiconductor device comprises a substrate, a conductive layer deposited on a substrate and an epitaxial layer deposited on the conductive layer. The conductive layer is patterned to include a first pattern. The first pattern includes a major surface and a plurality of grids defined in the major surface. The major surface includes a plurality of first lines and a connecting portion. The connecting portion is connected to an electrode. The epitaxial layer covers the grids and the first lines between the adjacent grids.