| 摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to reduce electrons which are used up due to overflowing by forming an electron blocking layer which consists of a nitride semiconductor. CONSTITUTION: An active layer(8) is formed on a first conductivity type semiconductor layer(6). A second conductivity type InAlGaN(indium aluminum gallium nitride) layer is formed on the active layer. A second conductivity type semiconductor layer(12) is formed on the second conductivity type InAlGaN layer. The second conductivity type InAlGaN layer comprises hydrogen. The second conductivity type InAlGaN layer is doped with Mg. [Reference numerals] (10) P type InAlGaN layer; (12) P type semiconductor layer; (2) Substrate; (4) Buffer layer; (6) N type semiconductor layer; (8) Active layer |
