| 摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to release short wavelength light corresponding to green or blue by including an N-type electrode and a P-type electrode which are respectively connected to a P-type semiconductor layer and an N-type semiconductor layer. CONSTITUTION: An active layer(8) is formed on an N-type semiconductor layer(6). A P-type AlGaN(Aluminium gallium nitride) layer(10) is formed on the active layer. A P-type semiconductor layer is formed on the P-type AlGaN layer. The P-type AlGaN layer is doped by Mg(magnesium). The AlGaN layer doped with the Mg is formed on the active layer. [Reference numerals] (10) P type InAlGaN layer; (12) P type semiconductor layer; (2) Substrate; (4) Buffer layer; (6) N type semiconductor layer; (8) Active layer |
