发明名称 |
Nonvolatile memory and fabrication method thereof |
摘要 |
Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO3 film is disposed over the metal layer. A resistor layer comprising a SrZrO3 film is disposed on the buffer layer. A top electrode is disposed on the resistor layer.
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申请公布号 |
US8324068(B2) |
申请公布日期 |
2012.12.04 |
申请号 |
US20100943487 |
申请日期 |
2010.11.10 |
申请人 |
TSENG TSEUNG-YUEN;LIN CHUN-CHIEH;LIN CHAO-CHENG;WINBOND ELECTRONICS CORP. |
发明人 |
TSENG TSEUNG-YUEN;LIN CHUN-CHIEH;LIN CHAO-CHENG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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