| 摘要 |
PURPOSE: A light emitting device including a graphene pattern layer and a manufacturing method thereof are provided to improve the external quantum efficiency and to prevent total internal reflection of the light emitting device by using graphene as an electrode. CONSTITUTION: A first semiconductor layer(30) is formed on a substrate. An active layer is formed on the first semiconductor layer. A second semiconductor layer(50) is arranged on the active layer. A graphene pattern layer(60) is arranged on the second semiconductor layer. A polymer pattern layer is formed on the graphene pattern layer. |
